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Unihard--UV Photoresist Curing and Charge Neutralization System

This UV photoresist curing and charge neutralization system is used in LSI production lines as a UV radiation system.
Equipped with an extra-high pressure UV lamp and excimer lamp, this system can be used for a range of applications such as enhancing plasma resistance during dry etching, degassing and baking during the ion implementation process, neutralizing electrical charge, removing stress and low-k curing.


Characteristics


Strong illumination and uniform radiation

Guaranteed initial illumination of more than 650mw/cm2 (220nm to 320nm) and a degree of uniform radiation of ±10%.


EFEM which adopts a load port compliant with the SEMI standard (Φ12-inch system)

A high throughput is achieved by using an EFEM that adopts a load port (compliant with the SEMI standard) for the Φ12-inch system, and a clean, quick two-fingered transfer robot for the transfer system.


A high level of operability thanks to the use of Windows NT PC and compliance with the GEM300 standard (Φ12-inch system)

Windows NT PC is used for the Φ12-inch system to achieve a high level of operability (also compliant with the GEM300 standard).


Easy replacement of lamp unit

The lamp unit requires no adjustment after replacement, thereby reducing system downtime.


Constant illumination mode and accumulated exposure mode (Φ12-inch system: optional)

Using the constant illumination mode and accumulated exposure mode enables process consistency and standardization.


Extensive lineup of models

All workpiece cassettes can be accommodated. These include theΦ6-inch system (can also be used for systems less thanΦ5 inches), theΦ8-inch system (also able to be used for systems less thanΦ6 inches), and dedicated cassettes for theΦ12-inch system. In addition, we also offer a system of up toΦ8 inches, which is equipped with an excimer lamp.


Two-finger transfer robot


Lamp unit


Major Applications

  • Enhancement of plasma resistance during dry etching
  • Degassing and baking photoresist during the ion implementation process
  • Neutralization of electrical charge and removal of stress
  • Low-k curing
  • Formulation of an inter-layer insulator film for a thin-film magnetic head
  • Lift-off processing of compound semiconductors
  • Surface modification
  • CCD and CMOS imager breaching


For further information, please contact:

Tokyo Tel: +81 3-6361-5591, Fax: +81 3-6361-5599




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