Flash Lamp Anneal

The flash lamp emits a large volume of milisecond pulse light. It enables processing within a small thermal budget, as only the surface temperature of the irradiated object increases.

• Search for research papers

Achieves activation with zero-diffusion x j control for the development of devices beyond the 45nm design rule.

Enables the formation of connection layers over a range of depths from the shallowest level to the deepest level by controlling the pulse length.

Enables lamp irradiation on the entire wafer surface to achieve high throughput.

Enables efficient temperature increases, as the wavelengths from the flash lamp absorbs Si well .

• Ultra shallow junction
• Silicidation
• Formation of super-thin oxidation layer
• Formation of films for ferroelectric capacitors, etc.

Tokyo Tel: +81 3-3242-5115, Fax: +81 3-3242-2700
Osaka Tel: +81 6-6306-5711, Fax: +81 6-6306-5718