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Extreme Ultraviolet (EUV) Light Sources for Next-Generation Semiconductors

“The number of transistors on an integrated circuit will double about two years.”

Semiconductors have evolved just as predicted in Moore’s Law, expounded by Gordon Moore, who co-founded the world’s largest semiconductor manufacturer, Intel Corporation. The evolution has driven the innovations that produced many of the products we use in our daily lives.

To create semiconductors that are even finer, better performing, and more compact, the light source for the lithography process, regarded as the most critical manufacturing process, has continually been replaced by light sources with shorter wavelengths. And today, development is underway to enable mass production of next-generation semiconductors with a half-pitch of 20 nm or smaller. The ultimate light source for lithography is considered to be EUV(*1) with the extremely short wavelength of 13.5nm.

Discharge Produced Plasma (DPP)-method EUV light source (for mass-produced trial exposure device)

DPP-method EUV light source (for small field exposure tool) used in R&D activities for the New Energy and Industrial Technology Development Organization (NEDO)

News release

Presentation

First Tin Beta SoCoMo ready for Wafer Exposure　（PDF：1.86MB）
Tin DPP Source Collector Module (SoCoMo): Status of Beta products and HVM developments　（PDF：948KB）

Road map of light sources for semiconductor lithography by the USHIO group

USHIO has developed cutting-edge lithography light sources since the 1960s, when manufacturing of integrated circuits (IC) started. Today, we have available more than 200 UV lamp products for photolithography (a global share of 80%). In addition, USHIO has earned an enviable reputation and trust. And today, USHIO has also stepped up development efforts to rapidly achieve mass production, in an intensive development partnership with Group company XTREME Technologies GmbH (Germany*1).

Brief history of EUV development by USHIO

2001	XTREME Technologies GmbH is established
2002	EUVA is established, with the participated of USHIO
2005	USHIO acquires 50% of the shares of XTREME
2006	Philips EUV ships alpha tools
2007	USHIO and XTREME ship alpha tools
2007	USHIO and Philips form a business alliance
2008	XTREME and Philips EUV begin joint research
2008	XTREME and Philips demonstrate 500W output from a point light-emitting source
2008	USHIO makes XTREME a 100% subsidiary
2010	EUVA achieves output of 1kW from a point light-emitting source
2010	Businesses acquired from Philips EUV

^*1)XTREME technologies GmbH (XTREME) was established in 2001 to research, develop, and manufacture DPP-method EUV light sources. The company became a 100% subsidiary of USHIO in 2008, and started joint research with Philips EUV that also develops DPP-method EUV light sources. Furthermore in 2010, an agreement was reached to have EUV businesses of Philips EUV transferred to XTREME. This has integrated all the development and manufacturing endeavors for DPP-method EUV light sources at XTREME.
http://www.xtremetec.com/

For further information, please contact:

USHIO INC.
Tokyo Tel: +81 3-3242-5615, Fax: +81 3-3242-0695

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