Applied Physics Express

Toma Nishibayashi¹, Ryosuke Kondo¹, Eri Matsubara¹, Ryoya Yamada¹, Yoshinori Imoto¹, Koki Hattori¹, Sho Iwayama¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake²,
Koichi Naniwae³,Kohei Miyoshi³, Akihiko Yamaguchi⁴, and Motoaki Iwaya¹ 
 

¹Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan
²Graduate School of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
³Ushio, Inc., Gotenba 412-0038, Japan
⁴Seishin Trading Co. Ltd., Kobe 650-0047, Japan

 

In recent years, reports on UV -LDs have been published one after another. Considering the application field of UV semiconductor light-emitting devices, it is essential to achieve high output, high current density operation, and it is important to establish a fabrication process for vertical devices to realize these.  In this letter, we investigated the realization of an AlGaN-based vertical UV-B LD using the LLO method. As a result, at a current density of 25kA cm^‒2, the emission changes to an extremely sharp emission with a peak wavelength of 298.1 nm and a FWHM of less than 1 nm, which is characteristic of stimulated emission.


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