The Growing Importance of Displacement Measurement

Measurement and inspection accuracy and reproducibility are becoming more and more important in manufacturing, as they are directly linked to higher productivity, better quality, and cost reduction.
In particular, displacement sensors using lasers with excellent light focusing and pointing characteristics are necessary in processes such as thickness and shape measurement, which require non-contact, high-precision measurement at the µm (micrometer) level.
Since laser displacement sensors are suitable for measuring microscopic dimensions such as wafer thickness and electrode thickness, as well as substrate height, gap, and cross-sectional shape, they are used in a wide range of applications such as measurement and inspection of brake disc displacement, engine vibration in automotive applications, and so on.

A laser displacement sensor is an important device for measuring the displacement of a target object with high accuracy. In order to achieve high spatial resolution, the laser beam spot size must be small. For this reason, single transverse mode lasers are generally used.
The laser beam reflected by the measurement target is focused through the lens onto the CMOS sensor, and the displacement is calculated based on the position of the beam on the CMOS sensor.
The better the beam quality, the smaller the detection error and the more accurate and reproducible the measurement.

In selecting a laser wavelength, many factors should be considered.
Currently, the near-infrared range (700-1000 nm) has the highest efficiency in laser diode emission, while most CMOS sensors most commonly used in photodetectors have the highest sensitivity in the 500-700 nm range. For this reason, laser diodes in the red band (630-700 nm) are widely used in view of total system efficiency.

In the manufacturing process, it is also important to miniaturize the laser displacement sensor, since measurements must be made in a limited space.
To simplify the cooling structure of the device and achieve miniaturization, laser diodes that work stably at high temperatures are chosen.
Depending on the detection distance of the laser displacement meter, there may be cases in which the measurement is performed in close proximity to the object, causing expansion of the object due to the heat generation from the device, which may cause a measurement error. Therefore, a laser diode that operates with low power consumption and high efficiency is required.
Consequently, laser diodes that operate at low power consumption and high efficiency are required.

The newly released “HL65311MG/312MG,” diode is ideal for laser displacement sensors. With a wavelength of 662 nm, optical output of 12 mW, and the highest operating temperature of 90℃. This diode is based on Ushio technologies developed over many years to achieve excellent beam quality, high efficiency, low power consumption, and high temperature operation.  



■Product Features
・Optical out power12mW
    Allows for a wider measurement range, including low reflection and rough-surfaced objects.
・Best-in-class wide operating temperature range of -40°C to 90°C
    Applicable to a wide range of temperature environments, from cryogenic to high temperatures, the system simplifies the cooling structure of
    the device and realizes miniaturization.
・Best-in-class low power consumption and high efficiency operation
    It helps to suppress heat generation of the equipment and reduce measurement errors caused by expansion and contraction of the object due to
    temperature changes.
・Excellent beam quality
    It reduces detection errors and contributes for improvement of measurement accuracy.

■Product specification（Tc＝25℃）

Optical output power	12mW
Lasing wavelength	662nm
Operating temperature	-40～+90ºC
Beam Divergence (FWHM)	Parallel 7°   Perpendicular 30°
Transverse mode	Single transverse mode
Oscillation mode	TE mode
Package	5.6mm CAN Package

  

■Applications 
・    Displacement Sensors
・    Photoelectric Sensors
・    Measuring instruments



■Packages

• ・Φ5.6mm Package

• ・Internal circuit

• Products	HL65311MG	HL65312MG

• ■Typical Characteristic curve
   

  • I-L curve characteristic	Far Field Pattern
    Spectrum

    
    　
    ■Datasheet　
        HL65311MG/312MG
     

  
  ■MOQ for Mass Production
  MOQ: 10,000 pcs/lot
  
   

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