EUV Light Source Produced by USHIO To Be Adopted by European Research Institute

- Announced at Opening Ceremony of New Plant -

USHIO Inc. is pleased to announce that EUV*1 light source in DPP*2 method manufactured by XTREME technologies GmbH (headquartered in Aachen, Germany; President: Marc Corthout; “XTREME”), a 100% subsidiary of Ushio, Inc. (headquartered in Tokyo; President and Representative Director: Shiro Sugata; “USHIO”), is to be adopted by IMEC*3 (Interuniversity Microelectronic Center) located in Belgium, an major independent international research institute in Europe.

XTREME completed construction of a new plant for the mass production of the DPP-method EUV light sources required in the fabrication of semiconductors of the 22-nanometer generation and smaller at Alsdorf, situated near the border with the Netherlands. An opening ceremony for the plant was held on December 10. At the ceremony, IMEC Director Mr. Kurt Ronse announced that it had decided to adopt XTREME-made DPP-method EUV light source in Spring 2011.

Numerous companies involved in the fabrication of semiconductors including devices, masks and resist material participate in IMEC, and it already maintains and operates DPP-method EUV light sources (α tool) manufactured by Phillips EUV, whose business was acquired by XTREME in July 2010. In the future, IMEC will conduct verification of semiconductor fabrication processes with DPP-method EUV light source (β tool)　produced by XTREME.

The DPP-method EUV light source deployed by IMEC represents the one of several units for which XTREME has already receive orders. USHIO has been engaged in the development of EUV light sources since 1990’s. Through the EUVA*4, Ushio has accepted consignment of research work and development grants from Japan’s NEDO*5 and subsidies from Germany’s BMBF*6.

Looking ahead, Ushio will work through XTREME to further accelerate development geared toward the mass production of EUV light sources.

*1 EUV(Extreme Ultraviolet)
EUV is referred to as the last light source used in semiconductor lithography, following ArF excimer laser used in the current liquid immersion double exposure. A feature of EUV light is the extremely short wavelength, at 13.5 nanometers.

*2 DPP(Discharge Produced Plasma)
The DPP is a light source that emits Extreme Ultraviolet (EUV) light from plasma generated by electrical discharge. Besides the DPP-type, the Laser Produced Plasma (LPP) light source is also available, from which EUV light is obtained from plasma generated by laser. Competition is underway in the development of the two systems.

*3 IMEC(Interuniversity Microelectronics Center) IMEC is an independent international research institute in Europe, established in 1984. The head office is located at Leuven, Belgium.
http://www.imec.be/

*4 EUVA(Extreme Ultraviolet Lithography System Development Association) EUVA was established in June 2002 under the R&D Partnership Act with the aim of promoting the rapid establishment of light source and exposure system technologies that utilize Extreme Ultraviolet (EUV), with collaboration among industry, educational institutes, and the government to achieve microfabrication in semiconductor manufacturing.

*5 NEDO(New Energy and Industrial Technology Development Organization)
http://www.nedo.go.jp/

*6 BMBF(Federal Ministry of Education and Research)
http://www.bmbf.de/en

New XTREME’s factory at Alsdorf

Reference

Brief history of EUV development by USHIO

2001 XTREME Technologies GmbH is established
2002 EUVA is established, with the participation of USHIO
2005 USHIO acquires 50% of the shares of XTREME
2006 Philips EUV ships alpha tools
2007 USHIO and XTREME ship alpha tools
2007 USHIO and Philips form a business alliance
2008 XTREME and Philips EUV begin joint research
2008 XTREME and Philips demonstrate 500W output from a point light-emitting source
2008 USHIO makes XTREME a 100% subsidiary
2010 EUVA achieves output of 1kW from a point light-emitting source
2010 Businesses acquired from Philips EUV

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