USHIO Will Deliver First High-Intensity EUV Light Source Unit to the Netherlands-based Research Institute, TNO
USHIO’s New Entry to Market of Mask Inspection System Light Sources for Next-Generation Lithography Process
USHIO INC. (HQ: Tokyo, President and CEO: Kenji Hamashima) and Netherlands Organisation for Applied Scientific Research (hereinafter “TNO”) today announced that they have established a strategic partnership aimed to enable development of extreme ultra-violet (EUV) Lithography for next generation semiconductor manufacturing.
TNO and USHIO are jointly building a new experimental EUV exposure and analysis facility to study radiation induced effects on EUV optics and reticles. The new facility, called EBL2, will support the common goal of understanding of contamination effects on surfaces under all extreme ultraviolet radiation conditions foreseen in the power roadmap for upcoming lithography tools. This will speed up the development of next-generation lithography systems, masks, and pellicles. The USHIO high-intensity Sn LDP (Laser-assisted Discharge-produced Plasma) EUV light source will provide pulsed EUV in a well-controlled environment similar to the lithography system conditions. Sample handling and transport will be automated and have cleanliness levels equal to state-of-the-art semiconductor standards for EUV production.
The USHIO Sn LDP EUV light source can achieve intensity and output of the source approximately 5 to 10 times higher than that of Xenon. Therefore, it enhances the throughput of EUV mask inspection associated with the EUV lithography, which plans to be adopted in the next-generation lithography in and after 2017.
EUV mask technology is critical for the commercialization of EUV lithography and the development of EUV mask inspection tools such as actinic blank inspection (ABI) and actinic pattern inspection (API) and so on is needed. USHIO aims at providing substantial support to the mask inspection process at device manufacturers as well as mask makers by delivering its inspection light sources to mask inspection equipment manufacturers.
USHIO will present the paper relating EUV light source at the "SPIE Advanced Lithography 2016", to be held on February 21 (Sun.) through 25 (Thu.), 2016, at the San Jose McEnery Convention Center and San Jose Marriot in San Jose, California, USA.
TNO (HQ: Den Hague, The Netherlands) is an independent innovation organisation. TNO connects people and knowledge to create innovations that sustainably boost the competitive strength of industry and the welfare of society. This is what drives the 2.800 professionals at TNO, in their work every day.
TNO believes in the joint creation of economic and social value. Innovation with purpose is what TNO stands for. TNO develops knowledge not for its own sake, but for practical application. TNO works in collaboration with partners and focuses on five transitions that have been identified together with stakeholders.
TNO’s International Center for Contamination Control has been established to focus dedicated contamination control research and development for partners in industry, supported by an extensive variety of experimental facilities.
More information: <https://www.tno.nl/en/>