Physica. Status Solidi a2019

Broadband Ultraviolet Emission from 2D Arrays of AlGaN

Microstructures Grown on the Patterned AlN Templates


Ken Kataoka1, 2, Mitsuru Funato1, and Yoichi Kawakami1 

1 Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan 
2 Research & Development Division, USHIO Inc., Himeji, Hyogo 671-0224, Japan 


 Broadband ultraviolet (UV) emission from AlGaN microstructured 2D arrays is achieved. 2D arrays of trenches are formed on AlN templates on sapphire (0001) substrates by photolithography and dry etching. Then AlGaN quantum wells are regrown on the arrays. The emission wavelength varies as a result of variations in the composition and thickness in the quantum wells. This variation in composition and thickness is due to the bunched steps formed in the trench. The mechanism for the formation of bunching steps is caused by differences in AlN growth rates due to variations in the source-precursor flow in narrow trenches. 



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