Applied Physics Express Volume14, Number6, 2021

Low threshold current density in GaInN-based laser diodes with GaN tunnel junctions 


Yuki Kato1, Kohei Miyoshi2, Tetsuya Takeuchi1, Tetsuro Inagaki1, Motoaki Iwaya1, Satoshi Kamiyama1 and Isamu Akasaki1,3

1 Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

2 Ushio, Inc., Gotenba 412-0038, Japan

3 Akasaki Research Center, Nagoya University, Nagoya 464-8603 Japan

In recent years, GaN-based visible laser diodes (LDs) with high light output power have been applied to laser projectors and so on. At the same time, wall plug efficiency (WPE) values of the GaN-based LDs are lower than those of GaAs-based LDs, and the situation is even worse for GaN-based LDs with longer wavelengths. one of the factors for the low WPE is high threshold current density values in the GaN-based LDs. The threshold current density can be reduced with an increase of an optical confinement factor, Γ. In this letter, we demonstrated GaN-based blue LDs with AlInN cladding layers on both the bottom n-type and the upper p-type layer sides using GaN tunnel junctions to improve the optical confinement factor. 

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