Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodes 

Takumu Saito¹, Rintaro Miyake¹, Ryoya Yamada¹, Yoshinori Imoto¹, Shundai Maruyama¹, 

Yusuke Sasaki¹, Shogo Karino¹, Sho Iwayama¹, Hideto Miyake², Koichi Naniwae³, 

Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ 
 

¹Meijo University (Japan), ²Mie University (Japan), ³Ushio, Inc. (Japan) 

　This study investigated the impact of growth temperature on the steepness of the heterostructure interface between the p-side optical waveguide and the electron blocking layer (EBL) in ultraviolet-B (UV-B) AlGaN-based laser diodes (LDs). Lowering the growth temperature significantly reduced the thickness of the unintended compositionally graded layer formed by solid-phase diffusion at the interface. However, LDs with extremely steep interfaces exhibited high resistance, preventing proper diode operation. These findings highlight a tradeoff between interface steepness and diode performance in AlGaN heterostructures, indicating the need for further optimization of growth conditions to achieve high-performance UV-B LDs. Specifically, efforts should focus on reducing impurity concentrations associated with low-temperature growth and controlling the thickness of layers such as the EBL to mitigate high resistance issues. 



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