2015 International Conference on Solid State Devices and Materials(SSDM)

Behavior of Si Atoms, Ge Atoms and Vacancies for Flash Lamp Annealing

A.Heya1, N.Matsuo1, S.Hirano1, Y.Nakamura2, T.Yokomori2, M.Yoshioka2
(1.Univ. of Hyogo, 2.USHIO Inc.(Japan))


Article that discusses an investigation into the behavioral differences of atomic vacancies for solid-phase crystallization and liquid-crystal crystallization of Si and Ge, and explains the self-diffusion of Si and Ge atoms due to atomic vacancies in FLA crystallization.

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