SiとGe、固相結晶化と液晶結晶化における原子空孔の挙動の差異を検討し、FLA結晶化を原子空孔を介したSiおよびGe原子の自己拡散で説明した。

Article that discusses an investigation into the behavioral differences of atomic vacancies for solid-phase crystallization and liquid-crystal crystallization of Si and Ge, and explains the self-diffusion of Si and Ge atoms due to atomic vacancies in FLA crystallization.

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