AMFPD(Int Conf Active-Matrix Flat Panel and Devices)

Formation of nc-Si in SiOx by Flash lamp anneling

University of Hyogo,
Naoki Yoshioka
Akira Heya
Naoto Matuo
Yousuke Nakamura
Gakuhiko Yokomori
Masaki Yoshioka
Osaka University,
Kazuyuki Kohama
Kazuhiro Ito


Discussion on the clumping of Si atoms in the Si excess region and the formation of nanocrystal Si with a diameter of 9 nm observed in response to FLA on amorphous Si excess SiOx films.

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