Verification of resolution considering process margins for the 10µm pitch patterning of organic substrates 

Naoya Sohara, Yu Abe, Ryotaro Takahashi, and Hirosuke Takamatsu

Ushio Inc, Japan 

　Although semiconductor performance has been improved mainly through miniaturization, other methods are being explored due to the high cost and difficulty of fabrication in recent years.In this trend, heterogeneous integration, in which multiple chips are connected on a single substrate to achieve high performance and high functionality, is gaining popularity. With the development of this technology, conventional exposure systems for organic substrates are required to achieve both miniaturization and large area. However, there is no data that investigates to what extent the current SAP process can support miniaturization. 

　In this paper, we measured the exposure process margin of 5µm L/S based on the assumption of the SAP process. As a result, with the two types of lenses prepared in this study, 5µm L/S patterning is possible with both lenses, but the lens with the lower NA has a wider margin. With appropriate NA selection, 5µm L/S patterning is possible with conventional processes. 

 

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