USHIO

(2016.08)
AMFPD(Int Conf Active-Matrix Flat Panel and Devices)

Formation of nc-Si in SiOx by Flash lamp anneling

University of Hyogo,
Naoki Yoshioka
Akira Heya
Naoto Matuo
USHIO INC.,
Yousuke Nakamura
Gakuhiko Yokomori
Masaki Yoshioka
Osaka University,
Kazuyuki Kohama
Kazuhiro Ito

非晶質Si過剰SiOx膜にFLAを行うことで、Si過剰領域のSi原子が凝集し、粒径9nmのSiナノ結晶が形成されることを明らかとした。

Discussion on the clumping of Si atoms in the Si excess region and the formation of nanocrystal Si with a diameter of 9 nm observed in response to FLA on amorphous Si excess SiOx films.

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