EUV light source (for photo mask inspection and various technologies development)
- Litho-Patterning
- Inspection
- Semiconductors
The semiconductor industry's continuous advance toward higher performance, smaller size and lower power consumption has spurred the development of ultra-miniaturized exposure technology. EUV (extreme ultraviolet) exposure technology at 13.5 nm wavelength is one of the most promising next-generation technologies.
USHIO is conducting EUV light source development for photo mask inspection and for various other technical applications utilizing our experience in the study and development of our EUV Xe DPP and EUV Sn LDP light source technologies.